BAS70.../BAS170W
Silicon Schottky Diode
•
General-purpose diode for high-speed switching
•
Circuit protection
•
Voltage clamping
•
High-level detecting and mixing
•
BAS70-04S: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
1)
BAS170W
BAS70-02L
BAS70-02W
BAS70-02V
BAS70
BAS70-04
BAS70-04W
BAS70-04S
BAS70-05
BAS70-05W
!
!
$
#
, "
"
!
, !
,
,
,
,
,
,
!
BAS70-06
BAS70-06W
!
BAS70-07
BAS70-07W
"
!
,
,
,
,
1
BAS70-02L
is not qualified according AEC Q101
1
2014-02-13
BAS70.../BAS170W
Type
BAS170W
BAS70
BAS70-02L
BAS70-02V
BAS70-02W*
BAS70-04
BAS70-04S
BAS70-04W
BAS70-05
BAS70-05W
BAS70-06
BAS70-06W
BAS70-07
BAS70-07W
* Not for new design
Package
SOD323
SOT23
TSLP-2-1
SC79
SCD80
SOT23
SOT363
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
Configuration
single
single
single, leadless
single
single
series
dual series
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
L
S
(nH)
1.8
1.8
0.4
0.6
0.6
1.8
1.6
1.4
1.8
1.4
1.8
1.4
2
1.8
Marking
white 7
73s
F
c
73
74s
74s
74s
75s
75s
76s
76s
77s
77s
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
t
≤
10ms
Total power dissipation
BAS70, BAS70-07,
T
S
≤
72 °C
BAS70-02L,
T
S
≤
117 °C
BAS70-02W, -02V,
T
S
≤
107 °C
BAS70-04, BAS70-06,
T
S
≤
48 °C
BAS70-04S/W/-06W, BAS170W,
T
S
≤
97 °C
BAS70-05,
T
S
≤
22 °C
BAS70-05W,
T
S
≤
90 °C
BAS70-07W,
T
S
≤
114 °C
Junction temperature
Operating temperature range
Storage temperature
T
J
T
op
T
Stg
P
tot
250
250
250
250
250
250
250
250
150
-55 ... 125
-55 ... 150
°C
mW
Symbol
V
R
I
F
I
FSM
Value
70
70
100
Unit
V
mA
2
2014-02-13
BAS70.../BAS170W
Thermal Resistance
Parameter
Junction - soldering point
1)
BAS70, BAS70-07
BAS70-02L
BAS70-02W, -02V
BAS70-04, BAS70-06
BAS70-04S/W, BAS70-06W
BAS70-05
BAS70-05W
BAS70-07W
BAS170W
Symbol
R
thJS
Value
≤
310
≤
130
≤
170
≤
410
≤
210
≤
510
≤
240
≤
145
≤
190
Unit
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
V
(BR)
I
R
V
F
Symbol
min.
70
-
Values
typ.
-
-
max.
-
0.1
Unit
V
µA
mV
Reverse current
V
R
= 50 V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
300
600
720
∆
V
F
-
375
705
880
-
410
750
1000
20
Forward voltage matching
2)
I
F
= 10 mA
1
For
2
∆V
calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
F is the difference between lowest and highest
V
F in a multiple diode component.
3
2014-02-13
BAS70.../BAS170W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
Diode capacitance
V
R
= 0 ,
f
= 1 MHz
Forward resistance
I
F
= 10 mA,
f
= 10 kHz
Charge carrier life time
I
F
= 25 mA
τ
rr
-
-
100
ps
r
f
-
34
-
Ω
C
T
-
1.5
2
pF
typ.
max.
Unit
4
2014-02-13
BAS70.../BAS170W
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
BAS 70W/BAS 170W
EHB00044
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 10 kHz
10
4
2.0
C
T
pF
Ohm
1.5
10
3
1.0
10
2
0.5
r
f
0.0
0
20
40
60
V
V
R
80
10
1 -2
10
10
-1
10
0
10
1
mA
10
2
I
F
Reverse current
I
R
=
ƒ(V
R
)
T
A
= Parameter
BAS 70W/BAS 170W
EHB00043
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
2
BAS 70W/BAS 170W
EHB00042
10
2
Ι
R
µ
A
10
1
T
A
= 150 C
Ι
F
mA
10
1
10
0
85 C
10
0
10
-1
10
-2
25 C
10
-1
T
A
= -40 C
25 C
85 C
150 C
10
-3
0
20
40
60
V
V
R
80
10
-2
0.0
0.5
1.0
V
V
F
1.5
5
2014-02-13
PCB设计
